| Fabricant | |
| Référence Fabricant | 2N7002W |
| Référence EBEE | E87420322 |
| Boîtier | SOT-323 |
| Numéro Client | |
| Fiche Technique | |
| Modèles EDA | |
| ECCN | EAR99 |
| Description | 60V 115mA 5Ω@10V,0.5A 200mW 2.5V@250uA 1 N-Channel SOT-323 MOSFETs ROHS |
| Qté. | Prix unitaire | Prix total |
|---|---|---|
| 50+ | $0.0184 | $ 0.9200 |
| 500+ | $0.0152 | $ 7.6000 |
| 3000+ | $0.0115 | $ 34.5000 |
| 6000+ | $0.0105 | $ 63.0000 |
| 24000+ | $0.0095 | $ 228.0000 |
| 51000+ | $0.0090 | $ 459.0000 |
| Type | Description | Tout sélectionner |
|---|---|---|
| Catégorie | Transistors/Thyistors ,MOSFET | |
| Fiche Technique | hongjiacheng 2N7002W | |
| RoHS | ||
| Type | N-Channel | |
| RDS (on) | 900mΩ@10V | |
| Température de fonctionnement | -55℃~+150℃ | |
| Capacité de transfert inversé (Crss-Vds) | 5pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 200mW | |
| Drain to Source Voltage | 60V | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Current - Continuous Drain(Id) | 115mA | |
| Ciss-Input Capacitance | 50pF | |
| Output Capacitance(Coss) | 25pF | |
| Gate Charge(Qg) | - |
| Qté. | Prix unitaire | Prix total |
|---|---|---|
| 50+ | $0.0184 | $ 0.9200 |
| 500+ | $0.0152 | $ 7.6000 |
| 3000+ | $0.0115 | $ 34.5000 |
| 6000+ | $0.0105 | $ 63.0000 |
| 24000+ | $0.0095 | $ 228.0000 |
| 51000+ | $0.0090 | $ 459.0000 |
