| Fabricant | |
| Référence Fabricant | SVF7N65F |
| Référence EBEE | E8467752 |
| Boîtier | TO-220F-3 |
| Numéro Client | |
| Fiche Technique | |
| Modèles EDA | |
| ECCN | - |
| Description | 650V 4.4A 1.4Ω@10V,3.5A 46W 4V@250uA 1 N-channel TO-220F-3 MOSFETs ROHS |
| Qté. | Prix unitaire | Prix total |
|---|---|---|
| 5+ | $0.3377 | $ 1.6885 |
| 50+ | $0.2788 | $ 13.9400 |
| 150+ | $0.2474 | $ 37.1100 |
| 500+ | $0.2081 | $ 104.0500 |
| 2000+ | $0.1907 | $ 381.4000 |
| 5000+ | $0.1802 | $ 901.0000 |
| Type | Description | Tout sélectionner |
|---|---|---|
| Catégorie | Transistors/Thyistors ,MOSFET | |
| Fiche Technique | Hangzhou Silan Microelectronics SVF7N65F | |
| RoHS | ||
| Type | N-Channel | |
| Configuration | - | |
| RDS (on) | 1.1Ω@10V | |
| Température de fonctionnement | -55℃~+150℃ | |
| Capacité de transfert inversé (Crss-Vds) | 9pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 46W | |
| Drain to Source Voltage | 650V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 7A | |
| Ciss-Input Capacitance | 789pF | |
| Output Capacitance(Coss) | 98pF | |
| Gate Charge(Qg) | 21nC@10V |
| Qté. | Prix unitaire | Prix total |
|---|---|---|
| 5+ | $0.3377 | $ 1.6885 |
| 50+ | $0.2788 | $ 13.9400 |
| 150+ | $0.2474 | $ 37.1100 |
| 500+ | $0.2081 | $ 104.0500 |
| 2000+ | $0.1907 | $ 381.4000 |
| 5000+ | $0.1802 | $ 901.0000 |
