| Fabricant | |
| Référence Fabricant | SVF7N65CD |
| Référence EBEE | E8467750 |
| Boîtier | TO-252 |
| Numéro Client | |
| Fiche Technique | |
| Modèles EDA | |
| ECCN | None |
| Description | 650V 7A 89W 1.4Ω@10V,3.5A 4V@250uA 1 N-channel TO-252 MOSFETs ROHS |
| Qté. | Prix unitaire | Prix total |
|---|---|---|
| 1+ | $0.4900 | $ 0.4900 |
| 10+ | $0.3872 | $ 3.8720 |
| 30+ | $0.3438 | $ 10.3140 |
| 100+ | $0.2892 | $ 28.9200 |
| 500+ | $0.2522 | $ 126.1000 |
| 1000+ | $0.2378 | $ 237.8000 |
| Type | Description | Tout sélectionner |
|---|---|---|
| Catégorie | Transistors/Thyistors ,MOSFET | |
| Fiche Technique | Hangzhou Silan Microelectronics SVF7N65CD | |
| RoHS | ||
| RDS (on) | - | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 89W | |
| Drain to Source Voltage | 650V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 7A |
| Qté. | Prix unitaire | Prix total |
|---|---|---|
| 1+ | $0.4900 | $ 0.4900 |
| 10+ | $0.3872 | $ 3.8720 |
| 30+ | $0.3438 | $ 10.3140 |
| 100+ | $0.2892 | $ 28.9200 |
| 500+ | $0.2522 | $ 126.1000 |
| 1000+ | $0.2378 | $ 237.8000 |
