| Fabricant | |
| Référence Fabricant | SVF18N50PN |
| Référence EBEE | E82761790 |
| Boîtier | TO-3P |
| Numéro Client | |
| Fiche Technique | |
| Modèles EDA | |
| ECCN | - |
| Description | 500V 18A 260mΩ@10V,9A 240W 4V@250uA 1 N-Channel TO-3P MOSFETs ROHS |
| Qté. | Prix unitaire | Prix total |
|---|---|---|
| 1+ | $1.0749 | $ 1.0749 |
| 10+ | $0.8638 | $ 8.6380 |
| 30+ | $0.7844 | $ 23.5320 |
| 90+ | $0.6796 | $ 61.1640 |
| 510+ | $0.6177 | $ 315.0270 |
| 1200+ | $0.5843 | $ 701.1600 |
| Type | Description | Tout sélectionner |
|---|---|---|
| Catégorie | Transistors/Thyistors ,MOSFET | |
| Fiche Technique | Hangzhou Silan Microelectronics SVF18N50PN | |
| RoHS | ||
| Type | N-Channel | |
| RDS (on) | 260mΩ@10V | |
| Température de fonctionnement | -55℃~+150℃ | |
| Capacité de transfert inversé (Crss-Vds) | 7pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 240W | |
| Drain to Source Voltage | 500V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 18A | |
| Ciss-Input Capacitance | 2.32nF | |
| Output Capacitance(Coss) | 282pF | |
| Gate Charge(Qg) | 38nC@10V |
| Qté. | Prix unitaire | Prix total |
|---|---|---|
| 1+ | $1.0749 | $ 1.0749 |
| 10+ | $0.8638 | $ 8.6380 |
| 30+ | $0.7844 | $ 23.5320 |
| 90+ | $0.6796 | $ 61.1640 |
| 510+ | $0.6177 | $ 315.0270 |
| 1200+ | $0.5843 | $ 701.1600 |
