5% off
| Fabricant | |
| Référence Fabricant | 4953 |
| Référence EBEE | E8717603 |
| Boîtier | SO-8 |
| Numéro Client | |
| Fiche Technique | |
| Modèles EDA | |
| ECCN | EAR99 |
| Description | 30V 5.1A 48mΩ@10V,5.1A 2W 1.6V@250uA 2 P-Channel SO-8 MOSFETs ROHS |
| Qté. | Prix unitaire | Prix total |
|---|---|---|
| 5+ | $0.0828 | $ 0.4140 |
| 50+ | $0.0670 | $ 3.3500 |
| 150+ | $0.0591 | $ 8.8650 |
| 500+ | $0.0532 | $ 26.6000 |
| 3000+ | $0.0468 | $ 140.4000 |
| 6000+ | $0.0445 | $ 267.0000 |
| Type | Description | Tout sélectionner |
|---|---|---|
| Catégorie | Transistors/Thyristors ,MOSFETs | |
| Fiche Technique | Guangdong Hottech 4953 | |
| RoHS | ||
| RDS(on) | 55mΩ@10V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 70pF | |
| Number | 2 P-Channel | |
| Pd - Power Dissipation | 2.5W | |
| Drain to Source Voltage | 30V | |
| Gate Threshold Voltage (Vgs(th)) | 1.1V | |
| Current - Continuous Drain(Id) | 5.1A | |
| Ciss-Input Capacitance | 520pF | |
| Gate Charge(Qg) | 11nC@10V |
| Qté. | Prix unitaire | Prix total |
|---|---|---|
| 5+ | $0.0828 | $ 0.4140 |
| 50+ | $0.0670 | $ 3.3500 |
| 150+ | $0.0591 | $ 8.8650 |
| 500+ | $0.0532 | $ 26.6000 |
| 3000+ | $0.0468 | $ 140.4000 |
| 6000+ | $0.0445 | $ 267.0000 |
