5% off
| Fabricant | |
| Référence Fabricant | GBS65041TOB |
| Référence EBEE | E85451736 |
| Boîtier | TO-247 |
| Numéro Client | |
| Fiche Technique | |
| Modèles EDA | |
| ECCN | - |
| Description | 650V 54A 450W 34mΩ@10V,25A 4V@1mA 1 N-channel TO-247 MOSFETs ROHS |
| Qté. | Prix unitaire | Prix total |
|---|---|---|
| 1+ | $2.6315 | $ 2.6315 |
| 10+ | $2.2541 | $ 22.5410 |
| 30+ | $1.8399 | $ 55.1970 |
| 90+ | $1.5981 | $ 143.8290 |
| 510+ | $1.4890 | $ 759.3900 |
| 990+ | $1.4418 | $ 1427.3820 |
| Type | Description | Tout sélectionner |
|---|---|---|
| Catégorie | Transistors/Thyistors ,MOSFET | |
| Fiche Technique | GOSEMICON GBS65041TOB | |
| RoHS | ||
| Type | N-Channel | |
| RDS (on) | 34mΩ@10V | |
| Température de fonctionnement | -55℃~+150℃ | |
| Capacité de transfert inversé (Crss-Vds) | 13pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 313W | |
| Drain to Source Voltage | 650V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 66A | |
| Ciss-Input Capacitance | 6.26nF | |
| Output Capacitance(Coss) | 93pF | |
| Gate Charge(Qg) | 149nC |
| Qté. | Prix unitaire | Prix total |
|---|---|---|
| 1+ | $2.6315 | $ 2.6315 |
| 10+ | $2.2541 | $ 22.5410 |
| 30+ | $1.8399 | $ 55.1970 |
| 90+ | $1.5981 | $ 143.8290 |
| 510+ | $1.4890 | $ 759.3900 |
| 990+ | $1.4418 | $ 1427.3820 |
