| Fabricant | |
| Référence Fabricant | SI2301 |
| Référence EBEE | E8306861 |
| Boîtier | SOT-23 |
| Numéro Client | |
| Fiche Technique | |
| Modèles EDA | |
| ECCN | - |
| Description | 20V 3A 1.25W 89mΩ@2.5V,2.0A 1V@250uA 1 Piece P-Channel SOT-23 MOSFETs ROHS |
| Qté. | Prix unitaire | Prix total |
|---|---|---|
| 50+ | $0.0318 | $ 1.5900 |
| 500+ | $0.0267 | $ 13.3500 |
| 3000+ | $0.0200 | $ 60.0000 |
| 6000+ | $0.0183 | $ 109.8000 |
| 24000+ | $0.0169 | $ 405.6000 |
| 51000+ | $0.0161 | $ 821.1000 |
| Type | Description | Tout sélectionner |
|---|---|---|
| Catégorie | Transistors/Thyistors ,MOSFET | |
| Fiche Technique | BORN SI2301 | |
| RoHS | ||
| RDS (on) | 110mΩ@4.5V | |
| Température de fonctionnement | -55℃~+150℃ | |
| Capacité de transfert inversé (Crss-Vds) | 87pF | |
| Number | 1 P-Channel | |
| Pd - Power Dissipation | 1.25W | |
| Drain to Source Voltage | 20V | |
| Gate Threshold Voltage (Vgs(th)) | 1.4V | |
| Current - Continuous Drain(Id) | 3A | |
| Ciss-Input Capacitance | 415pF | |
| Output Capacitance(Coss) | 223pF | |
| Gate Charge(Qg) | [email protected] |
| Qté. | Prix unitaire | Prix total |
|---|---|---|
| 50+ | $0.0318 | $ 1.5900 |
| 500+ | $0.0267 | $ 13.3500 |
| 3000+ | $0.0200 | $ 60.0000 |
| 6000+ | $0.0183 | $ 109.8000 |
| 24000+ | $0.0169 | $ 405.6000 |
| 51000+ | $0.0161 | $ 821.1000 |
