| Hersteller | |
| Hersteller-Teilenummer | 2N65AG |
| EBEE-Teilenummer | E87433960 |
| Gehäuse | SOT-223-3L |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | - |
| Beschreibung | 650V 4A SOT-223-3L MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.1390 | $ 0.6950 |
| 50+ | $0.1085 | $ 5.4250 |
| 150+ | $0.0955 | $ 14.3250 |
| 500+ | $0.0792 | $ 39.6000 |
| 2500+ | $0.0720 | $ 180.0000 |
| 4000+ | $0.0676 | $ 270.4000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Transistoren/Thyristoren ,MOSFET | |
| Datenblatt | WEIDA 2N65AG | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 3.8Ω@10V | |
| Reverse Transfer Capacitance (Crss-Vds) | 6pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 35W | |
| Drain to Source Voltage | 650V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 2A | |
| Ciss-Input Capacitance | 290pF | |
| Output Capacitance(Coss) | 31pF | |
| Gate Charge(Qg) | 9nC |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.1390 | $ 0.6950 |
| 50+ | $0.1085 | $ 5.4250 |
| 150+ | $0.0955 | $ 14.3250 |
| 500+ | $0.0792 | $ 39.6000 |
| 2500+ | $0.0720 | $ 180.0000 |
| 4000+ | $0.0676 | $ 270.4000 |
