56% off
| Hersteller | |
| Hersteller-Teilenummer | TK5A50D(STA4,X,M) |
| EBEE-Teilenummer | E82990813 |
| Gehäuse | TO-220SIS |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 500V 5A 35W 1.3Ω@10V,2.5A 4.4V@1mA 1 N-channel TO-220SIS MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.5705 | $ 0.5705 |
| 10+ | $0.5108 | $ 5.1080 |
| 50+ | $0.4810 | $ 24.0500 |
| 100+ | $0.4512 | $ 45.1200 |
| 500+ | $0.4329 | $ 216.4500 |
| 1000+ | $0.4246 | $ 424.6000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | TOSHIBA TK5A50D(STA4,X,M) | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 1.5Ω@10V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 3pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 35W | |
| Drain to Source Voltage | 500V | |
| Gate Threshold Voltage (Vgs(th)) | 4.4V | |
| Current - Continuous Drain(Id) | 5A | |
| Ciss-Input Capacitance | 490pF | |
| Output Capacitance(Coss) | 55pF | |
| Gate Charge(Qg) | 11nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.5705 | $ 0.5705 |
| 10+ | $0.5108 | $ 5.1080 |
| 50+ | $0.4810 | $ 24.0500 |
| 100+ | $0.4512 | $ 45.1200 |
| 500+ | $0.4329 | $ 216.4500 |
| 1000+ | $0.4246 | $ 424.6000 |
