30% off
| Hersteller | |
| Hersteller-Teilenummer | STB6NK90ZT4 |
| EBEE-Teilenummer | E8315154 |
| Gehäuse | D2PAK |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 900V 5.8A 1.56Ω@10V,2.9A 140W 4.5V@100uA 1 N-channel D2PAK MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.9832 | $ 0.9832 |
| 10+ | $0.8212 | $ 8.2120 |
| 30+ | $0.7334 | $ 22.0020 |
| 100+ | $0.6333 | $ 63.3300 |
| 500+ | $0.5884 | $ 294.2000 |
| 1000+ | $0.5692 | $ 569.2000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | ST STB6NK90ZT4 | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 2Ω@10V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 26pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 140W | |
| Drain to Source Voltage | 900V | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Current - Continuous Drain(Id) | 5.8A | |
| Ciss-Input Capacitance | 1.35nF | |
| Output Capacitance(Coss) | 130pF | |
| Gate Charge(Qg) | 60.5nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.9832 | $ 0.9832 |
| 10+ | $0.8212 | $ 8.2120 |
| 30+ | $0.7334 | $ 22.0020 |
| 100+ | $0.6333 | $ 63.3300 |
| 500+ | $0.5884 | $ 294.2000 |
| 1000+ | $0.5692 | $ 569.2000 |
