| Hersteller | |
| Hersteller-Teilenummer | SIZ340DT-T1-GE3 |
| EBEE-Teilenummer | E8269268 |
| Gehäuse | Power33-8 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 30V 9.5mΩ@10V,15.6A 2.4V@250uA 2 N-Channel Power-33-8 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.6463 | $ 0.6463 |
| 10+ | $0.5352 | $ 5.3520 |
| 30+ | $0.4796 | $ 14.3880 |
| 100+ | $0.4256 | $ 42.5600 |
| 500+ | $0.3812 | $ 190.6000 |
| 1000+ | $0.3637 | $ 363.7000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,FET, MOSFET Arrays | |
| Datenblatt | VISHAY SIZ340DT-T1-GE3 | |
| RoHS | ||
| Temperatur | -55℃~+150℃ | |
| Typ | N-Channel | |
| Konfiguration | Half-Bridge | |
| Reverse Transfer Capacitance (Crss-Vds) | - | |
| Number | 2 N-Channel | |
| Pd - Power Dissipation | 31W | |
| Drain to Source Voltage | 30V | |
| Gate Threshold Voltage (Vgs(th)) | 2.4V | |
| Current - Continuous Drain(Id) | 40A |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.6463 | $ 0.6463 |
| 10+ | $0.5352 | $ 5.3520 |
| 30+ | $0.4796 | $ 14.3880 |
| 100+ | $0.4256 | $ 42.5600 |
| 500+ | $0.3812 | $ 190.6000 |
| 1000+ | $0.3637 | $ 363.7000 |
