| Hersteller | |
| Hersteller-Teilenummer | SIHF18N50D-E3 |
| EBEE-Teilenummer | E86228059 |
| Gehäuse | TO-220F |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 500V 11A 280mΩ@10V,9A 39W 5V@250uA 1 N-channel TO-220 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $1.8440 | $ 1.8440 |
| 10+ | $1.7964 | $ 17.9640 |
| 30+ | $1.7657 | $ 52.9710 |
| 100+ | $1.7349 | $ 173.4900 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | VISHAY SIHF18N50D-E3 | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 280mΩ@10V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 14pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 39W | |
| Drain to Source Voltage | 500V | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Current - Continuous Drain(Id) | 18A | |
| Ciss-Input Capacitance | 1.5nF | |
| Output Capacitance(Coss) | 131pF | |
| Gate Charge(Qg) | 76nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $1.8440 | $ 1.8440 |
| 10+ | $1.7964 | $ 17.9640 |
| 30+ | $1.7657 | $ 52.9710 |
| 100+ | $1.7349 | $ 173.4900 |
