| Hersteller | |
| Hersteller-Teilenummer | SI2333CDS-T1-E3 |
| EBEE-Teilenummer | E8144846 |
| Gehäuse | SOT-23 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 12V 5.1A 0.035Ω@4.5V,4.5A 1.6W 400mV@250uA 1 Piece P-Channel SOT-23 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.4209 | $ 2.1045 |
| 50+ | $0.3262 | $ 16.3100 |
| 150+ | $0.2857 | $ 42.8550 |
| 500+ | $0.2351 | $ 117.5500 |
| 3000+ | $0.2126 | $ 637.8000 |
| 6000+ | $0.1991 | $ 1194.6000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | VISHAY SI2333CDS-T1-E3 | |
| RoHS | ||
| Typ | P-Channel | |
| RDS(on) | 59mΩ@1.8V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 260pF | |
| Number | 1 P-Channel | |
| Pd - Power Dissipation | 2.5W | |
| Drain to Source Voltage | 12V | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Current - Continuous Drain(Id) | 7.1A | |
| Ciss-Input Capacitance | 1.225nF | |
| Output Capacitance(Coss) | 315pF | |
| Gate Charge(Qg) | [email protected] |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.4209 | $ 2.1045 |
| 50+ | $0.3262 | $ 16.3100 |
| 150+ | $0.2857 | $ 42.8550 |
| 500+ | $0.2351 | $ 117.5500 |
| 3000+ | $0.2126 | $ 637.8000 |
| 6000+ | $0.1991 | $ 1194.6000 |
