| Hersteller | |
| Hersteller-Teilenummer | IRL640STRLPBF |
| EBEE-Teilenummer | E8499485 |
| Gehäuse | D2PAK |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 200V 17A 180mΩ@5V,10A 2V@250uA 1 N-channel D2PAK MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $1.7481 | $ 1.7481 |
| 10+ | $1.4830 | $ 14.8300 |
| 30+ | $1.3385 | $ 40.1550 |
| 100+ | $1.1734 | $ 117.3400 |
| 500+ | $1.1003 | $ 550.1500 |
| 800+ | $1.0686 | $ 854.8800 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | VISHAY IRL640STRLPBF | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 180mΩ@5V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 120pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 3.1W;125W | |
| Drain to Source Voltage | 200V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Current - Continuous Drain(Id) | 17A | |
| Ciss-Input Capacitance | 1.8nF | |
| Output Capacitance(Coss) | 400pF | |
| Gate Charge(Qg) | 66nC@5V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $1.7481 | $ 1.7481 |
| 10+ | $1.4830 | $ 14.8300 |
| 30+ | $1.3385 | $ 40.1550 |
| 100+ | $1.1734 | $ 117.3400 |
| 500+ | $1.1003 | $ 550.1500 |
| 800+ | $1.0686 | $ 854.8800 |
