| Hersteller | |
| Hersteller-Teilenummer | IRFI640GPBF |
| EBEE-Teilenummer | E8466979 |
| Gehäuse | TO-220F |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 200V 9.8A 0.18Ω@10V,5.9A 40W 2V@250uA 1 N-channel TO-220F-3 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $1.6770 | $ 1.6770 |
| 10+ | $1.4234 | $ 14.2340 |
| 50+ | $1.2651 | $ 63.2550 |
| 100+ | $1.1021 | $ 110.2100 |
| 500+ | $1.0284 | $ 514.2000 |
| 1000+ | $0.9976 | $ 997.6000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | VISHAY IRFI640GPBF | |
| RoHS | ||
| RDS(on) | 180mΩ@10V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 130pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 40W | |
| Drain to Source Voltage | 200V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Current - Continuous Drain(Id) | 9.8A | |
| Ciss-Input Capacitance | 1.3nF | |
| Gate Charge(Qg) | 70nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $1.6770 | $ 1.6770 |
| 10+ | $1.4234 | $ 14.2340 |
| 50+ | $1.2651 | $ 63.2550 |
| 100+ | $1.1021 | $ 110.2100 |
| 500+ | $1.0284 | $ 514.2000 |
| 1000+ | $0.9976 | $ 997.6000 |
