| Hersteller | |
| Hersteller-Teilenummer | IRFD9020PBF |
| EBEE-Teilenummer | E8727829 |
| Gehäuse | HVMDIP-4 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 60V 1.1A 0.28Ω@10V,0.96A 1.3W 2V@1uA HVMDIP-4 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $1.0518 | $ 1.0518 |
| 10+ | $1.0286 | $ 10.2860 |
| 30+ | $1.0116 | $ 30.3480 |
| 100+ | $0.9962 | $ 99.6200 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | VISHAY IRFD9020PBF | |
| RoHS | ||
| Typ | P-Channel | |
| RDS(on) | 280mΩ@10V | |
| Betriebstemperatur - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 65pF | |
| Number | 1 P-Channel | |
| Pd - Power Dissipation | 1.3W | |
| Drain to Source Voltage | 60V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 1.1A | |
| Ciss-Input Capacitance | 570pF | |
| Output Capacitance(Coss) | 360pF | |
| Gate Charge(Qg) | 19nC |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $1.0518 | $ 1.0518 |
| 10+ | $1.0286 | $ 10.2860 |
| 30+ | $1.0116 | $ 30.3480 |
| 100+ | $0.9962 | $ 99.6200 |
