| Hersteller | |
| Hersteller-Teilenummer | IRFD210PBF |
| EBEE-Teilenummer | E8727520 |
| Gehäuse | HVMDIP-4 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 200V 600mA 1.5Ω@10V,0.36A 1W 2V@250uA HVMDIP-4 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $1.4968 | $ 1.4968 |
| 10+ | $1.2355 | $ 12.3550 |
| 30+ | $1.0911 | $ 32.7330 |
| 100+ | $0.9297 | $ 92.9700 |
| 500+ | $0.8575 | $ 428.7500 |
| 1000+ | $0.8237 | $ 823.7000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | VISHAY IRFD210PBF | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 1.5Ω@10V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 15pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 1W | |
| Drain to Source Voltage | 200V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Current - Continuous Drain(Id) | 600mA | |
| Ciss-Input Capacitance | 140pF | |
| Output Capacitance(Coss) | 53pF | |
| Gate Charge(Qg) | 8.2nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $1.4968 | $ 1.4968 |
| 10+ | $1.2355 | $ 12.3550 |
| 30+ | $1.0911 | $ 32.7330 |
| 100+ | $0.9297 | $ 92.9700 |
| 500+ | $0.8575 | $ 428.7500 |
| 1000+ | $0.8237 | $ 823.7000 |
