| Hersteller | |
| Hersteller-Teilenummer | IRFD024PBF |
| EBEE-Teilenummer | E8141582 |
| Gehäuse | HVMDIP-4 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 60V 1.8A 0.1Ω@10V,1.5A 1.3W 4V@250uA 1 N-channel HVMDIP-4 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $2.0896 | $ 2.0896 |
| 10+ | $1.8210 | $ 18.2100 |
| 30+ | $1.6521 | $ 49.5630 |
| 100+ | $1.4061 | $ 140.6100 |
| 500+ | $1.3277 | $ 663.8500 |
| 1000+ | $1.2930 | $ 1293.0000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | VISHAY IRFD024PBF | |
| RoHS | ||
| Typ | N-Channel | |
| Konfiguration | - | |
| RDS(on) | 100mΩ@10V | |
| Betriebstemperatur - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 79pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 1.3W | |
| Drain to Source Voltage | 60V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 2.5A | |
| Ciss-Input Capacitance | 640pF | |
| Output Capacitance(Coss) | 360pF | |
| Gate Charge(Qg) | 25nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $2.0896 | $ 2.0896 |
| 10+ | $1.8210 | $ 18.2100 |
| 30+ | $1.6521 | $ 49.5630 |
| 100+ | $1.4061 | $ 140.6100 |
| 500+ | $1.3277 | $ 663.8500 |
| 1000+ | $1.2930 | $ 1293.0000 |
