| Hersteller | |
| Hersteller-Teilenummer | IRFBF20PBF |
| EBEE-Teilenummer | E8466977 |
| Gehäuse | TO-220AB |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 900V 1.7A 8Ω@10V,1A 54W 4V@250uA 1 N-channel TO-220AB MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $1.0225 | $ 1.0225 |
| 10+ | $0.9288 | $ 9.2880 |
| 30+ | $0.8780 | $ 26.3400 |
| 100+ | $0.8209 | $ 82.0900 |
| 500+ | $0.7955 | $ 397.7500 |
| 1000+ | $0.7844 | $ 784.4000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | VISHAY IRFBF20PBF | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 8Ω@10V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 18pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 54W | |
| Drain to Source Voltage | 900V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 1.7A | |
| Ciss-Input Capacitance | 490pF | |
| Output Capacitance(Coss) | 55pF | |
| Gate Charge(Qg) | 38nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $1.0225 | $ 1.0225 |
| 10+ | $0.9288 | $ 9.2880 |
| 30+ | $0.8780 | $ 26.3400 |
| 100+ | $0.8209 | $ 82.0900 |
| 500+ | $0.7955 | $ 397.7500 |
| 1000+ | $0.7844 | $ 784.4000 |
