| Hersteller | |
| Hersteller-Teilenummer | IRFBC40ASPBF |
| EBEE-Teilenummer | E83009868 |
| Gehäuse | D2PAK |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 600V 6.2A 1.2Ω@10V,3.7A 125W 4V@250uA 1 N-channel D2PAK MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $2.2986 | $ 2.2986 |
| 10+ | $1.9279 | $ 19.2790 |
| 50+ | $1.6960 | $ 84.8000 |
| 100+ | $1.4593 | $ 145.9300 |
| 500+ | $1.3520 | $ 676.0000 |
| 1000+ | $1.3047 | $ 1304.7000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | VISHAY IRFBC40ASPBF | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 1.2Ω@10V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 7pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 125W | |
| Drain to Source Voltage | 600V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 6.2A | |
| Ciss-Input Capacitance | 1.036nF | |
| Output Capacitance(Coss) | 136pF | |
| Gate Charge(Qg) | 42nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $2.2986 | $ 2.2986 |
| 10+ | $1.9279 | $ 19.2790 |
| 50+ | $1.6960 | $ 84.8000 |
| 100+ | $1.4593 | $ 145.9300 |
| 500+ | $1.3520 | $ 676.0000 |
| 1000+ | $1.3047 | $ 1304.7000 |
