| Hersteller | |
| Hersteller-Teilenummer | IRFBC20PBF |
| EBEE-Teilenummer | E82892050 |
| Gehäuse | TO-220AB-3 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 600V 1.4A 50W 4.4Ω@10V,1.3A 4V@250uA TO-220AB-3 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.9790 | $ 0.9790 |
| 10+ | $0.8101 | $ 8.1010 |
| 30+ | $0.7172 | $ 21.5160 |
| 100+ | $0.6134 | $ 61.3400 |
| 500+ | $0.5669 | $ 283.4500 |
| 1000+ | $0.5453 | $ 545.3000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | VISHAY IRFBC20PBF | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 4.4Ω@10V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 8.6pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 50W | |
| Drain to Source Voltage | 600V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 2.2A | |
| Ciss-Input Capacitance | 350pF | |
| Output Capacitance(Coss) | 48pF | |
| Gate Charge(Qg) | 18nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.9790 | $ 0.9790 |
| 10+ | $0.8101 | $ 8.1010 |
| 30+ | $0.7172 | $ 21.5160 |
| 100+ | $0.6134 | $ 61.3400 |
| 500+ | $0.5669 | $ 283.4500 |
| 1000+ | $0.5453 | $ 545.3000 |
