| Hersteller | |
| Hersteller-Teilenummer | IRF9510SPBF |
| EBEE-Teilenummer | E8727768 |
| Gehäuse | D2PAK(TO-263) |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 100V 4A 1.2Ω@10V,2.4A 43W 4V@250uA 1 Piece P-Channel TO-263 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $1.2152 | $ 1.2152 |
| 10+ | $1.1058 | $ 11.0580 |
| 50+ | $1.0381 | $ 51.9050 |
| 100+ | $0.9688 | $ 96.8800 |
| 500+ | $0.9364 | $ 468.2000 |
| 1000+ | $0.9226 | $ 922.6000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | VISHAY IRF9510SPBF | |
| RoHS | ||
| Typ | P-Channel | |
| RDS(on) | 1.2Ω@10V | |
| Betriebstemperatur - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 18pF | |
| Number | 1 P-Channel | |
| Pd - Power Dissipation | 43W | |
| Drain to Source Voltage | 100V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 4A | |
| Ciss-Input Capacitance | 200pF | |
| Output Capacitance(Coss) | 94pF | |
| Gate Charge(Qg) | 8.7nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $1.2152 | $ 1.2152 |
| 10+ | $1.1058 | $ 11.0580 |
| 50+ | $1.0381 | $ 51.9050 |
| 100+ | $0.9688 | $ 96.8800 |
| 500+ | $0.9364 | $ 468.2000 |
| 1000+ | $0.9226 | $ 922.6000 |
