| Hersteller | |
| Hersteller-Teilenummer | IRF640SPBF |
| EBEE-Teilenummer | E83277649 |
| Gehäuse | D2PAK(TO-263) |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 200V 18A 0.18Ω@10V,11A 130W 2V@250uA 1 N-channel D2PAK(TO-263) MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $1.6664 | $ 1.6664 |
| 10+ | $1.4061 | $ 14.0610 |
| 30+ | $1.2626 | $ 37.8780 |
| 100+ | $1.0569 | $ 105.6900 |
| 500+ | $0.9852 | $ 492.6000 |
| 1000+ | $0.9525 | $ 952.5000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | VISHAY IRF640SPBF | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 180mΩ@10V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 130pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 130W | |
| Drain to Source Voltage | 200V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 18A | |
| Ciss-Input Capacitance | 1.3nF | |
| Output Capacitance(Coss) | 430pF | |
| Gate Charge(Qg) | 70nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $1.6664 | $ 1.6664 |
| 10+ | $1.4061 | $ 14.0610 |
| 30+ | $1.2626 | $ 37.8780 |
| 100+ | $1.0569 | $ 105.6900 |
| 500+ | $0.9852 | $ 492.6000 |
| 1000+ | $0.9525 | $ 952.5000 |
