| Hersteller | |
| Hersteller-Teilenummer | IRF630STRLPBF |
| EBEE-Teilenummer | E83009865 |
| Gehäuse | TO-263(D2PAK) |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 200V 5.7A 74W 0.4Ω@10V,5.4A 2V@250uA 1 N-channel D2PAK MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $2.0353 | $ 2.0353 |
| 10+ | $1.7340 | $ 17.3400 |
| 30+ | $1.5454 | $ 46.3620 |
| 100+ | $1.1916 | $ 119.1600 |
| 500+ | $1.1035 | $ 551.7500 |
| 800+ | $1.0664 | $ 853.1200 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | VISHAY IRF630STRLPBF | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 400mΩ@10V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 76pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 74W | |
| Drain to Source Voltage | 200V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 9A | |
| Ciss-Input Capacitance | 800pF | |
| Output Capacitance(Coss) | 240pF | |
| Gate Charge(Qg) | 43nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $2.0353 | $ 2.0353 |
| 10+ | $1.7340 | $ 17.3400 |
| 30+ | $1.5454 | $ 46.3620 |
| 100+ | $1.1916 | $ 119.1600 |
| 500+ | $1.1035 | $ 551.7500 |
| 800+ | $1.0664 | $ 853.1200 |
