| Hersteller | |
| Hersteller-Teilenummer | IRF630PBF |
| EBEE-Teilenummer | E8727839 |
| Gehäuse | TO-220AB |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 200V 5.7A 400mΩ@10V,5.4A 74W 2V@250uA 1 N-channel TO-220AB-3 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.9349 | $ 0.9349 |
| 10+ | $0.7630 | $ 7.6300 |
| 50+ | $0.6779 | $ 33.8950 |
| 100+ | $0.5928 | $ 59.2800 |
| 500+ | $0.5430 | $ 271.5000 |
| 1000+ | $0.5157 | $ 515.7000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | VISHAY IRF630PBF | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 400mΩ@10V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 76pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 74W | |
| Drain to Source Voltage | 200V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Current - Continuous Drain(Id) | 5.7A | |
| Ciss-Input Capacitance | 800pF | |
| Gate Charge(Qg) | 43nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.9349 | $ 0.9349 |
| 10+ | $0.7630 | $ 7.6300 |
| 50+ | $0.6779 | $ 33.8950 |
| 100+ | $0.5928 | $ 59.2800 |
| 500+ | $0.5430 | $ 271.5000 |
| 1000+ | $0.5157 | $ 515.7000 |
