| Hersteller | |
| Hersteller-Teilenummer | IRF530SPBF |
| EBEE-Teilenummer | E8506474 |
| Gehäuse | D2PAK(TO-263) |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 100V 10A 0.16Ω@10V,8.4A 88W 2V@250uA 1 N-channel D2PAK MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $1.7941 | $ 1.7941 |
| 10+ | $1.5385 | $ 15.3850 |
| 50+ | $1.3401 | $ 67.0050 |
| 100+ | $1.1749 | $ 117.4900 |
| 500+ | $1.1019 | $ 550.9500 |
| 1000+ | $1.0686 | $ 1068.6000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | VISHAY IRF530SPBF | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 160mΩ@10V | |
| Betriebstemperatur - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 60pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 88W | |
| Drain to Source Voltage | 100V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Current - Continuous Drain(Id) | 10A | |
| Ciss-Input Capacitance | 670pF | |
| Output Capacitance(Coss) | 250pF | |
| Gate Charge(Qg) | 26nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $1.7941 | $ 1.7941 |
| 10+ | $1.5385 | $ 15.3850 |
| 50+ | $1.3401 | $ 67.0050 |
| 100+ | $1.1749 | $ 117.4900 |
| 500+ | $1.1019 | $ 550.9500 |
| 1000+ | $1.0686 | $ 1068.6000 |
