15% off
| Hersteller | |
| Hersteller-Teilenummer | WPM2016-VB |
| EBEE-Teilenummer | E822389138 |
| Gehäuse | SOT-23(TO-236) |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 20V 6A 28mΩ@4.5V,5A 2.1W 1V@250uA 1 N-channel SOT-23 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 10+ | $0.0578 | $ 0.5780 |
| 100+ | $0.0462 | $ 4.6200 |
| 300+ | $0.0403 | $ 12.0900 |
| 3000+ | $0.0360 | $ 108.0000 |
| 6000+ | $0.0325 | $ 195.0000 |
| 9000+ | $0.0307 | $ 276.3000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | VBsemi Elec WPM2016-VB | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 22mΩ@4.5V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 55pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 1.25W | |
| Drain to Source Voltage | 20V | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Current - Continuous Drain(Id) | 6A | |
| Ciss-Input Capacitance | 865pF | |
| Output Capacitance(Coss) | 105pF | |
| Gate Charge(Qg) | [email protected] |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 10+ | $0.0578 | $ 0.5780 |
| 100+ | $0.0462 | $ 4.6200 |
| 300+ | $0.0403 | $ 12.0900 |
| 3000+ | $0.0360 | $ 108.0000 |
| 6000+ | $0.0325 | $ 195.0000 |
| 9000+ | $0.0307 | $ 276.3000 |
