15% off
| Hersteller | |
| Hersteller-Teilenummer | VBZMB2N65 |
| EBEE-Teilenummer | E8700737 |
| Gehäuse | TO-220F |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 650V 2A 25W 2V@250uA 1 N-channel TO-220F-3 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.4181 | $ 0.4181 |
| 10+ | $0.3271 | $ 3.2710 |
| 50+ | $0.2796 | $ 13.9800 |
| 100+ | $0.2309 | $ 23.0900 |
| 500+ | $0.2091 | $ 104.5500 |
| 1000+ | $0.1963 | $ 196.3000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | VBsemi Elec VBZMB2N65 | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 4Ω@10V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 5pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 25W | |
| Drain to Source Voltage | 650V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Current - Continuous Drain(Id) | 2A | |
| Ciss-Input Capacitance | 1nF | |
| Output Capacitance(Coss) | 45pF | |
| Gate Charge(Qg) | 11nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.4181 | $ 0.4181 |
| 10+ | $0.3271 | $ 3.2710 |
| 50+ | $0.2796 | $ 13.9800 |
| 100+ | $0.2309 | $ 23.0900 |
| 500+ | $0.2091 | $ 104.5500 |
| 1000+ | $0.1963 | $ 196.3000 |
