15% off
| Hersteller | |
| Hersteller-Teilenummer | VBZFB80N03 |
| EBEE-Teilenummer | E8700683 |
| Gehäuse | TO-251 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 30V 100A 3.75W 2.5V@250uA 1 N-channel TO-251 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.3720 | $ 0.3720 |
| 10+ | $0.2911 | $ 2.9110 |
| 30+ | $0.2565 | $ 7.6950 |
| 80+ | $0.2052 | $ 16.4160 |
| 480+ | $0.1860 | $ 89.2800 |
| 800+ | $0.1731 | $ 138.4800 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | VBsemi Elec VBZFB80N03 | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 3.5mΩ@10V;4.5mΩ@4.5V | |
| Betriebstemperatur - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 170pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 250W | |
| Drain to Source Voltage | 30V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Current - Continuous Drain(Id) | 100A | |
| Ciss-Input Capacitance | 3nF | |
| Output Capacitance(Coss) | 710pF | |
| Gate Charge(Qg) | 170nC@10V;[email protected] |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.3720 | $ 0.3720 |
| 10+ | $0.2911 | $ 2.9110 |
| 30+ | $0.2565 | $ 7.6950 |
| 80+ | $0.2052 | $ 16.4160 |
| 480+ | $0.1860 | $ 89.2800 |
| 800+ | $0.1731 | $ 138.4800 |
