15% off
| Hersteller | |
| Hersteller-Teilenummer | VBZFB40P06 |
| EBEE-Teilenummer | E8700678 |
| Gehäuse | TO-251 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 60V 30A 38.5W 1V@250uA 1 Piece P-Channel TO-251 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.4758 | $ 0.4758 |
| 10+ | $0.3809 | $ 3.8090 |
| 30+ | $0.3412 | $ 10.2360 |
| 80+ | $0.2527 | $ 20.2160 |
| 480+ | $0.2296 | $ 110.2080 |
| 800+ | $0.2155 | $ 172.4000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | VBsemi Elec VBZFB40P06 | |
| RoHS | ||
| Typ | P-Channel | |
| RDS(on) | 48mΩ@10V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 90pF | |
| Number | 1 P-Channel | |
| Pd - Power Dissipation | 38.5W | |
| Drain to Source Voltage | 60V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Current - Continuous Drain(Id) | 30A | |
| Ciss-Input Capacitance | 1.9nF | |
| Output Capacitance(Coss) | 130pF | |
| Gate Charge(Qg) | 26nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.4758 | $ 0.4758 |
| 10+ | $0.3809 | $ 3.8090 |
| 30+ | $0.3412 | $ 10.2360 |
| 80+ | $0.2527 | $ 20.2160 |
| 480+ | $0.2296 | $ 110.2080 |
| 800+ | $0.2155 | $ 172.4000 |
