| Hersteller | |
| Hersteller-Teilenummer | VBZFB30N06 |
| EBEE-Teilenummer | E8700672 |
| Gehäuse | TO-251 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 60V 25A 59.5W 3.5V@250uA 1 N-channel TO-251 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.4496 | $ 0.4496 |
| 10+ | $0.3606 | $ 3.6060 |
| 30+ | $0.3214 | $ 9.6420 |
| 80+ | $0.2384 | $ 19.0720 |
| 480+ | $0.2173 | $ 104.3040 |
| 800+ | $0.2037 | $ 162.9600 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | VBsemi Elec VBZFB30N06 | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 32mΩ@10V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 130pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 59.5W | |
| Drain to Source Voltage | 60V | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Current - Continuous Drain(Id) | 25A | |
| Ciss-Input Capacitance | 1.1nF | |
| Output Capacitance(Coss) | 281pF | |
| Gate Charge(Qg) | 46nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.4496 | $ 0.4496 |
| 10+ | $0.3606 | $ 3.6060 |
| 30+ | $0.3214 | $ 9.6420 |
| 80+ | $0.2384 | $ 19.0720 |
| 480+ | $0.2173 | $ 104.3040 |
| 800+ | $0.2037 | $ 162.9600 |
