15% off
| Hersteller | |
| Hersteller-Teilenummer | VBZA9358 |
| EBEE-Teilenummer | E8700604 |
| Gehäuse | SO-8 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 30V 8A 2.5W 1V@250uA 2 P-Channel SO-8 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.5601 | $ 0.5601 |
| 10+ | $0.4548 | $ 4.5480 |
| 30+ | $0.4022 | $ 12.0660 |
| 100+ | $0.3510 | $ 35.1000 |
| 500+ | $0.3023 | $ 151.1500 |
| 1000+ | $0.2861 | $ 286.1000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | VBsemi Elec VBZA9358 | |
| RoHS | ||
| Typ | P-Channel | |
| RDS(on) | 13mΩ@10V;17mΩ@4.5V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 185pF | |
| Number | 2 P-Channel | |
| Pd - Power Dissipation | 5W | |
| Drain to Source Voltage | 30V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Current - Continuous Drain(Id) | 3A | |
| Ciss-Input Capacitance | 3.16nF | |
| Output Capacitance(Coss) | 215pF | |
| Gate Charge(Qg) | 15nC@10V;[email protected] |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.5601 | $ 0.5601 |
| 10+ | $0.4548 | $ 4.5480 |
| 30+ | $0.4022 | $ 12.0660 |
| 100+ | $0.3510 | $ 35.1000 |
| 500+ | $0.3023 | $ 151.1500 |
| 1000+ | $0.2861 | $ 286.1000 |
