15% off
| Hersteller | |
| Hersteller-Teilenummer | VBQA2309 |
| EBEE-Teilenummer | E8481053 |
| Gehäuse | DFN5x6-8 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 30V 47.3A 3.1W 0.008Ω@10V,20A 1V@250uA 1 Piece P-Channel DFN-8(5x6) MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.7477 | $ 0.7477 |
| 10+ | $0.6100 | $ 6.1000 |
| 30+ | $0.5412 | $ 16.2360 |
| 100+ | $0.4723 | $ 47.2300 |
| 500+ | $0.3914 | $ 195.7000 |
| 1000+ | $0.3698 | $ 369.8000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | VBsemi Elec VBQA2309 | |
| RoHS | ||
| RDS(on) | 8mΩ@10V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 820pF | |
| Number | 1 P-Channel | |
| Pd - Power Dissipation | 3.1W | |
| Drain to Source Voltage | 30V | |
| Gate Threshold Voltage (Vgs(th)) | - | |
| Current - Continuous Drain(Id) | 47.3A | |
| Ciss-Input Capacitance | 4.62nF | |
| Gate Charge(Qg) | 66nC@5V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.7477 | $ 0.7477 |
| 10+ | $0.6100 | $ 6.1000 |
| 30+ | $0.5412 | $ 16.2360 |
| 100+ | $0.4723 | $ 47.2300 |
| 500+ | $0.3914 | $ 195.7000 |
| 1000+ | $0.3698 | $ 369.8000 |
