15% off
| Hersteller | |
| Hersteller-Teilenummer | VBQA1806 |
| EBEE-Teilenummer | E87429160 |
| Gehäuse | DFN5x6-8 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 80V 23.8A 6.25W 1.2V@250uA 1 N-channel QFN8(5X6) MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $1.4373 | $ 1.4373 |
| 10+ | $1.2092 | $ 12.0920 |
| 30+ | $1.0838 | $ 32.5140 |
| 100+ | $0.9421 | $ 94.2100 |
| 500+ | $0.8016 | $ 400.8000 |
| 1000+ | $0.7733 | $ 773.3000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | VBsemi Elec VBQA1806 | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 4.8mΩ@10V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 93pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 104W | |
| Drain to Source Voltage | 80V | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V | |
| Current - Continuous Drain(Id) | 60A | |
| Ciss-Input Capacitance | 2.8nF | |
| Output Capacitance(Coss) | 1.1nF | |
| Gate Charge(Qg) | 57nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $1.4373 | $ 1.4373 |
| 10+ | $1.2092 | $ 12.0920 |
| 30+ | $1.0838 | $ 32.5140 |
| 100+ | $0.9421 | $ 94.2100 |
| 500+ | $0.8016 | $ 400.8000 |
| 1000+ | $0.7733 | $ 773.3000 |
