| Hersteller | |
| Hersteller-Teilenummer | VBMB2152M |
| EBEE-Teilenummer | E87541187 |
| Gehäuse | TO-220F |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 150V 200mΩ@10V 1 Piece P-Channel TO-220F MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $1.4734 | $ 1.4734 |
| 10+ | $1.2210 | $ 12.2100 |
| 50+ | $1.0670 | $ 53.3500 |
| 100+ | $0.9098 | $ 90.9800 |
| 500+ | $0.8399 | $ 419.9500 |
| 1000+ | $0.8098 | $ 809.8000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | VBsemi Elec VBMB2152M | |
| RoHS | ||
| Typ | P-Channel | |
| RDS(on) | 200mΩ@10V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 41pF | |
| Number | 1 P-Channel | |
| Pd - Power Dissipation | 40W | |
| Drain to Source Voltage | 150V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Current - Continuous Drain(Id) | 15A | |
| Ciss-Input Capacitance | 1.055nF | |
| Output Capacitance(Coss) | 65pF | |
| Gate Charge(Qg) | 23.2nC@10V;[email protected] |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $1.4734 | $ 1.4734 |
| 10+ | $1.2210 | $ 12.2100 |
| 50+ | $1.0670 | $ 53.3500 |
| 100+ | $0.9098 | $ 90.9800 |
| 500+ | $0.8399 | $ 419.9500 |
| 1000+ | $0.8098 | $ 809.8000 |
