5% off
| Hersteller | |
| Hersteller-Teilenummer | VBMB1302 |
| EBEE-Teilenummer | E87429159 |
| Gehäuse | TO-220F |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 30V 28.8A 3.75W 1V@250uA 1 N-channel TO-220F MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $1.0478 | $ 1.0478 |
| 10+ | $0.8657 | $ 8.6570 |
| 50+ | $0.6866 | $ 34.3300 |
| 100+ | $0.5963 | $ 59.6300 |
| 500+ | $0.5432 | $ 271.6000 |
| 1000+ | $0.5146 | $ 514.6000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | VBsemi Elec VBMB1302 | |
| RoHS | ||
| RDS(on) | - | |
| Betriebstemperatur - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 270pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 3.75W | |
| Drain to Source Voltage | 30V | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Current - Continuous Drain(Id) | 28.8A | |
| Ciss-Input Capacitance | 6.7nF | |
| Gate Charge(Qg) | 81.5nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $1.0478 | $ 1.0478 |
| 10+ | $0.8657 | $ 8.6570 |
| 50+ | $0.6866 | $ 34.3300 |
| 100+ | $0.5963 | $ 59.6300 |
| 500+ | $0.5432 | $ 271.6000 |
| 1000+ | $0.5146 | $ 514.6000 |
