5% off
| Hersteller | |
| Hersteller-Teilenummer | VBGL1102 |
| EBEE-Teilenummer | E821264522 |
| Gehäuse | TO-263(D2PAK) |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 100V 180A 2mΩ@10V 1 N-channel TO-263 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $2.6064 | $ 2.6064 |
| 10+ | $2.2052 | $ 22.0520 |
| 50+ | $1.9548 | $ 97.7400 |
| 100+ | $1.6984 | $ 169.8400 |
| 500+ | $1.5822 | $ 791.1000 |
| 1000+ | $1.5310 | $ 1531.0000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | VBsemi Elec VBGL1102 | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 2mΩ@10V | |
| Betriebstemperatur - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 21pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 150W | |
| Drain to Source Voltage | 100V | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Current - Continuous Drain(Id) | 180A | |
| Ciss-Input Capacitance | 8.6nF | |
| Output Capacitance(Coss) | 246pF | |
| Gate Charge(Qg) | 90nC |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $2.6064 | $ 2.6064 |
| 10+ | $2.2052 | $ 22.0520 |
| 50+ | $1.9548 | $ 97.7400 |
| 100+ | $1.6984 | $ 169.8400 |
| 500+ | $1.5822 | $ 791.1000 |
| 1000+ | $1.5310 | $ 1531.0000 |
