5% off
| Hersteller | |
| Hersteller-Teilenummer | VB2355 |
| EBEE-Teilenummer | E8416212 |
| Gehäuse | SOT-23(TO-236) |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 30V 5.4A 0.046Ω@10V,4.4A 1.25W 500mV@250uA 1 Piece P-Channel SOT-23 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.0494 | $ 0.2470 |
| 50+ | $0.0483 | $ 2.4150 |
| 150+ | $0.0474 | $ 7.1100 |
| 500+ | $0.0466 | $ 23.3000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | VBsemi Elec VB2355 | |
| RoHS | ||
| Typ | P-Channel | |
| RDS(on) | 46mΩ@10V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 130pF | |
| Number | 1 P-Channel | |
| Pd - Power Dissipation | 2.5W | |
| Drain to Source Voltage | 30V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Current - Continuous Drain(Id) | 5.6A | |
| Ciss-Input Capacitance | 1.295nF | |
| Output Capacitance(Coss) | 150pF | |
| Gate Charge(Qg) | 24nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.0494 | $ 0.2470 |
| 50+ | $0.0483 | $ 2.4150 |
| 150+ | $0.0474 | $ 7.1100 |
| 500+ | $0.0466 | $ 23.3000 |
