5% off
| Hersteller | |
| Hersteller-Teilenummer | VB1695 |
| EBEE-Teilenummer | E8416210 |
| Gehäuse | SOT-23(TO-236) |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 60V 4A 19W 0.075Ω@10V,4A 1V@250uA 1 N-channel SOT-23 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.2162 | $ 1.0810 |
| 50+ | $0.1719 | $ 8.5950 |
| 150+ | $0.1529 | $ 22.9350 |
| 500+ | $0.1291 | $ 64.5500 |
| 3000+ | $0.1091 | $ 327.3000 |
| 6000+ | $0.1027 | $ 616.2000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | VBsemi Elec VB1695 | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 86mΩ@4.5V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 13pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 1.66W | |
| Drain to Source Voltage | 60V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Current - Continuous Drain(Id) | 4A | |
| Ciss-Input Capacitance | 180pF | |
| Output Capacitance(Coss) | 22pF | |
| Gate Charge(Qg) | 2.1nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.2162 | $ 1.0810 |
| 50+ | $0.1719 | $ 8.5950 |
| 150+ | $0.1529 | $ 22.9350 |
| 500+ | $0.1291 | $ 64.5500 |
| 3000+ | $0.1091 | $ 327.3000 |
| 6000+ | $0.1027 | $ 616.2000 |
