15% off
| Hersteller | |
| Hersteller-Teilenummer | VB1307N |
| EBEE-Teilenummer | E8967462 |
| Gehäuse | SOT-23 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 30V 5A 1.1V@250uA SOT-23 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.1175 | $ 0.5875 |
| 50+ | $0.0935 | $ 4.6750 |
| 150+ | $0.0815 | $ 12.2250 |
| 500+ | $0.0726 | $ 36.3000 |
| 3000+ | $0.0654 | $ 196.2000 |
| 6000+ | $0.0618 | $ 370.8000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | VBsemi Elec VB1307N | |
| RoHS | ||
| Typ | N-Channel | |
| Konfiguration | - | |
| RDS(on) | 47mΩ@10V;62mΩ@4.5V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 17pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 1.6W | |
| Drain to Source Voltage | 30V | |
| Gate Threshold Voltage (Vgs(th)) | 1.1V | |
| Current - Continuous Drain(Id) | 5A | |
| Ciss-Input Capacitance | 520pF | |
| Output Capacitance(Coss) | 45pF | |
| Gate Charge(Qg) | 4.6nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.1175 | $ 0.5875 |
| 50+ | $0.0935 | $ 4.6750 |
| 150+ | $0.0815 | $ 12.2250 |
| 500+ | $0.0726 | $ 36.3000 |
| 3000+ | $0.0654 | $ 196.2000 |
| 6000+ | $0.0618 | $ 370.8000 |
