5% off
| Hersteller | |
| Hersteller-Teilenummer | VB1201K |
| EBEE-Teilenummer | E87429134 |
| Gehäuse | SOT-23(TO-236) |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 200V 600mA 1.55W 1.5V@250uA 1 N-channel SOT-23 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.3250 | $ 1.6250 |
| 50+ | $0.2574 | $ 12.8700 |
| 150+ | $0.2283 | $ 34.2450 |
| 500+ | $0.1822 | $ 91.1000 |
| 3000+ | $0.1662 | $ 498.6000 |
| 6000+ | $0.1565 | $ 939.0000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | VBsemi Elec VB1201K | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 1.4Ω@10V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | - | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 1.05W | |
| Drain to Source Voltage | 200V | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Current - Continuous Drain(Id) | 600mA | |
| Ciss-Input Capacitance | - | |
| Gate Charge(Qg) | 3nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.3250 | $ 1.6250 |
| 50+ | $0.2574 | $ 12.8700 |
| 150+ | $0.2283 | $ 34.2450 |
| 500+ | $0.1822 | $ 91.1000 |
| 3000+ | $0.1662 | $ 498.6000 |
| 6000+ | $0.1565 | $ 939.0000 |
