15% off
| Hersteller | |
| Hersteller-Teilenummer | TPC8207-VB |
| EBEE-Teilenummer | E84355061 |
| Gehäuse | SO-8 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 20V 7.1A 1.3W 0.019Ω@4.5V,7.1A 1.5V@250uA 2 N-Channel SO-8 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.2962 | $ 1.4810 |
| 50+ | $0.2356 | $ 11.7800 |
| 150+ | $0.2097 | $ 31.4550 |
| 500+ | $0.1773 | $ 88.6500 |
| 2500+ | $0.1557 | $ 389.2500 |
| 4000+ | $0.1471 | $ 588.4000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | VBsemi Elec TPC8207-VB | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 19mΩ@4.5V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | - | |
| Number | 2 N-Channel | |
| Pd - Power Dissipation | 1.3W | |
| Drain to Source Voltage | 20V | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Current - Continuous Drain(Id) | 7.1A | |
| Ciss-Input Capacitance | - | |
| Gate Charge(Qg) | [email protected] |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.2962 | $ 1.4810 |
| 50+ | $0.2356 | $ 11.7800 |
| 150+ | $0.2097 | $ 31.4550 |
| 500+ | $0.1773 | $ 88.6500 |
| 2500+ | $0.1557 | $ 389.2500 |
| 4000+ | $0.1471 | $ 588.4000 |
