| Hersteller | |
| Hersteller-Teilenummer | TPC8124-VB |
| EBEE-Teilenummer | E818794932 |
| Gehäuse | SO-8 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 30V 11A 10mΩ@10V 1 Piece P-Channel SOP-8 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.4437 | $ 0.4437 |
| 10+ | $0.3503 | $ 3.5030 |
| 30+ | $0.3114 | $ 9.3420 |
| 100+ | $0.2616 | $ 26.1600 |
| 500+ | $0.2118 | $ 105.9000 |
| 1000+ | $0.1993 | $ 199.3000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | VBsemi Elec TPC8124-VB | |
| RoHS | ||
| Typ | P-Channel | |
| RDS(on) | 11mΩ@10V;12mΩ@4.5V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 325pF | |
| Number | 1 P-Channel | |
| Pd - Power Dissipation | 5.6W | |
| Drain to Source Voltage | 30V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Current - Continuous Drain(Id) | 30A | |
| Ciss-Input Capacitance | 1.96nF | |
| Output Capacitance(Coss) | 380pF | |
| Gate Charge(Qg) | 43nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.4437 | $ 0.4437 |
| 10+ | $0.3503 | $ 3.5030 |
| 30+ | $0.3114 | $ 9.3420 |
| 100+ | $0.2616 | $ 26.1600 |
| 500+ | $0.2118 | $ 105.9000 |
| 1000+ | $0.1993 | $ 199.3000 |
