15% off
| Hersteller | |
| Hersteller-Teilenummer | TK50P03M1-VB |
| EBEE-Teilenummer | E87568948 |
| Gehäuse | TO-252 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | - |
| Beschreibung | 30V 60A 1 Piece P-Channel TO-252 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.4751 | $ 0.4751 |
| 10+ | $0.3766 | $ 3.7660 |
| 30+ | $0.3347 | $ 10.0410 |
| 100+ | $0.2821 | $ 28.2100 |
| 500+ | $0.2592 | $ 129.6000 |
| 1000+ | $0.2457 | $ 245.7000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | VBsemi Elec TK50P03M1-VB | |
| RoHS | ||
| Typ | P-Channel | |
| Konfiguration | - | |
| RDS(on) | 11mΩ@10V | |
| Betriebstemperatur - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 715pF | |
| Number | 1 P-Channel | |
| Pd - Power Dissipation | 127W | |
| Drain to Source Voltage | 30V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Current - Continuous Drain(Id) | 60A | |
| Ciss-Input Capacitance | 3.3nF | |
| Output Capacitance(Coss) | 1.565nF | |
| Gate Charge(Qg) | 160nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.4751 | $ 0.4751 |
| 10+ | $0.3766 | $ 3.7660 |
| 30+ | $0.3347 | $ 10.0410 |
| 100+ | $0.2821 | $ 28.2100 |
| 500+ | $0.2592 | $ 129.6000 |
| 1000+ | $0.2457 | $ 245.7000 |
