15% off
| Hersteller | |
| Hersteller-Teilenummer | TK15A50D-VB |
| EBEE-Teilenummer | E819632176 |
| Gehäuse | TO-220F |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 650V 20A 160mΩ@10V 1 N-channel TO-220F MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $2.3429 | $ 2.3429 |
| 10+ | $1.9987 | $ 19.9870 |
| 50+ | $1.7828 | $ 89.1400 |
| 100+ | $1.5615 | $ 156.1500 |
| 500+ | $1.4616 | $ 730.8000 |
| 1000+ | $1.4184 | $ 1418.4000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | VBsemi Elec TK15A50D-VB | |
| RoHS | ||
| Typ | N-Channel | |
| Konfiguration | - | |
| RDS(on) | 190mΩ@10V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 4pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 200W | |
| Drain to Source Voltage | 650V | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Current - Continuous Drain(Id) | 20A | |
| Ciss-Input Capacitance | 2.322nF | |
| Output Capacitance(Coss) | 105pF | |
| Gate Charge(Qg) | 106nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $2.3429 | $ 2.3429 |
| 10+ | $1.9987 | $ 19.9870 |
| 50+ | $1.7828 | $ 89.1400 |
| 100+ | $1.5615 | $ 156.1500 |
| 500+ | $1.4616 | $ 730.8000 |
| 1000+ | $1.4184 | $ 1418.4000 |
