15% off
| Hersteller | |
| Hersteller-Teilenummer | TK11A65D-VB |
| EBEE-Teilenummer | E819632059 |
| Gehäuse | TO-220F |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 650V 12A 680mΩ@10V 1 N-channel TO-220F MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.9109 | $ 0.9109 |
| 10+ | $0.7598 | $ 7.5980 |
| 50+ | $0.6775 | $ 33.8750 |
| 100+ | $0.5830 | $ 58.3000 |
| 500+ | $0.5426 | $ 271.3000 |
| 1000+ | $0.5237 | $ 523.7000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | VBsemi Elec TK11A65D-VB | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 650mΩ@10V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 200pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | - | |
| Drain to Source Voltage | 650V | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Current - Continuous Drain(Id) | 12A | |
| Ciss-Input Capacitance | 1.6nF | |
| Output Capacitance(Coss) | 300pF | |
| Gate Charge(Qg) | 43nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.9109 | $ 0.9109 |
| 10+ | $0.7598 | $ 7.5980 |
| 50+ | $0.6775 | $ 33.8750 |
| 100+ | $0.5830 | $ 58.3000 |
| 500+ | $0.5426 | $ 271.3000 |
| 1000+ | $0.5237 | $ 523.7000 |
