15% off
| Hersteller | |
| Hersteller-Teilenummer | SUP70042E-VB |
| EBEE-Teilenummer | E818457633 |
| Gehäuse | TO-220AB |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 100V 5mΩ@10V 1 N-channel TO-220AB MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $1.4405 | $ 1.4405 |
| 10+ | $1.2288 | $ 12.2880 |
| 50+ | $1.0964 | $ 54.8200 |
| 100+ | $0.9599 | $ 95.9900 |
| 500+ | $0.8985 | $ 449.2500 |
| 1000+ | $0.8725 | $ 872.5000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | VBsemi Elec SUP70042E-VB | |
| RoHS | ||
| Typ | N-Channel | |
| Konfiguration | - | |
| RDS(on) | 6mΩ@7.5V | |
| Betriebstemperatur - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 165pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 370W | |
| Drain to Source Voltage | 100V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 120A | |
| Ciss-Input Capacitance | 10nF | |
| Output Capacitance(Coss) | 2.025nF | |
| Gate Charge(Qg) | 120nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $1.4405 | $ 1.4405 |
| 10+ | $1.2288 | $ 12.2880 |
| 50+ | $1.0964 | $ 54.8200 |
| 100+ | $0.9599 | $ 95.9900 |
| 500+ | $0.8985 | $ 449.2500 |
| 1000+ | $0.8725 | $ 872.5000 |
