15% off
| Hersteller | |
| Hersteller-Teilenummer | STD95N4F3-VB |
| EBEE-Teilenummer | E822389114 |
| Gehäuse | TO-252 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | TO-252 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.5304 | $ 0.5304 |
| 10+ | $0.4265 | $ 4.2650 |
| 30+ | $0.3752 | $ 11.2560 |
| 100+ | $0.3239 | $ 32.3900 |
| 500+ | $0.2943 | $ 147.1500 |
| 1000+ | $0.2780 | $ 278.0000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | VBsemi Elec STD95N4F3-VB | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 5mΩ@10V;6.5mΩ@4.5V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 250pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 312W | |
| Drain to Source Voltage | 40V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Current - Continuous Drain(Id) | 85A | |
| Ciss-Input Capacitance | 2.38nF | |
| Output Capacitance(Coss) | 550pF | |
| Gate Charge(Qg) | 80nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.5304 | $ 0.5304 |
| 10+ | $0.4265 | $ 4.2650 |
| 30+ | $0.3752 | $ 11.2560 |
| 100+ | $0.3239 | $ 32.3900 |
| 500+ | $0.2943 | $ 147.1500 |
| 1000+ | $0.2780 | $ 278.0000 |
