15% off
| Hersteller | |
| Hersteller-Teilenummer | STD60NF55LT4-VB |
| EBEE-Teilenummer | E819188094 |
| Gehäuse | TO-252 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 60V 1 N-channel TO-252 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.5585 | $ 0.5585 |
| 10+ | $0.4533 | $ 4.5330 |
| 30+ | $0.4015 | $ 12.0450 |
| 100+ | $0.3496 | $ 34.9600 |
| 500+ | $0.3182 | $ 159.1000 |
| 1000+ | $0.3031 | $ 303.1000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | VBsemi Elec STD60NF55LT4-VB | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 20mΩ@10V | |
| Betriebstemperatur - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 225pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 136W | |
| Drain to Source Voltage | 60V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Current - Continuous Drain(Id) | 58A | |
| Ciss-Input Capacitance | 2.65nF | |
| Output Capacitance(Coss) | 470pF | |
| Gate Charge(Qg) | 47nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.5585 | $ 0.5585 |
| 10+ | $0.4533 | $ 4.5330 |
| 30+ | $0.4015 | $ 12.0450 |
| 100+ | $0.3496 | $ 34.9600 |
| 500+ | $0.3182 | $ 159.1000 |
| 1000+ | $0.3031 | $ 303.1000 |
