| Hersteller | |
| Hersteller-Teilenummer | STD35P6LLF6-VB |
| EBEE-Teilenummer | E8710095 |
| Gehäuse | TO-252 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 60V 40A 2.5W 1.5V@250uA 1 Piece P-Channel TO-252-2 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.9209 | $ 0.9209 |
| 10+ | $0.7590 | $ 7.5900 |
| 30+ | $0.6780 | $ 20.3400 |
| 100+ | $0.5970 | $ 59.7000 |
| 500+ | $0.5081 | $ 254.0500 |
| 1000+ | $0.4827 | $ 482.7000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | VBsemi Elec STD35P6LLF6-VB | |
| RoHS | ||
| Typ | P-Channel | |
| RDS(on) | 20mΩ@10V;25mΩ@4.5V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 305pF | |
| Number | 1 P-Channel | |
| Pd - Power Dissipation | - | |
| Drain to Source Voltage | 60V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Current - Continuous Drain(Id) | 50A | |
| Ciss-Input Capacitance | 2.95nF | |
| Output Capacitance(Coss) | 380pF | |
| Gate Charge(Qg) | 110nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.9209 | $ 0.9209 |
| 10+ | $0.7590 | $ 7.5900 |
| 30+ | $0.6780 | $ 20.3400 |
| 100+ | $0.5970 | $ 59.7000 |
| 500+ | $0.5081 | $ 254.0500 |
| 1000+ | $0.4827 | $ 482.7000 |
